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| Datasheet | STPSC1006G-TR |
| File Size | 107.03 KB |
| Total Pages | 8 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STPSC1006G-TR |
| Description | DIODE SILICON 600V 10A D2PAK |
STPSC1006G-TR - STMicroelectronics
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STPSC1006G-TR | STMicroelectronics | DIODE SILICON 600V 10A D2PAK | 138 More on Order |
URL Link
www.oemstron.com/datasheet/STPSC1006G-TR
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Manufacturer STMicroelectronics Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 150µA @ 600V Capacitance @ Vr, F 650pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D²PAK Operating Temperature - Junction -40°C ~ 175°C |