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| Datasheet | STQ1HN60K3-AP |
| File Size | 1,181.25 KB |
| Total Pages | 14 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | STQ1HN60K3-AP |
| Description | MOSFET N-CH 600V 0.4A TO-92 |
STQ1HN60K3-AP - STMicroelectronics
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URL Link
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Manufacturer STMicroelectronics Series SuperMESH3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V FET Feature - Power Dissipation (Max) 3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |