Semiconductors
Passive Components
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Optoelectronics
| Datasheet | STW26N60M2 |
| File Size | 800.56 KB |
| Total Pages | 16 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | STW26N60M2, STP26N60M2 |
| Description | MOSFET N-CH 600V 20A TO247, MOSFET N-CHANNEL 600V 20A TO220 |
STW26N60M2 - STMicroelectronics
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Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 100V FET Feature - Power Dissipation (Max) 169W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXFH) Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 169W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |