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| Datasheet | STW40N60M2-4 |
| File Size | 1,116.91 KB |
| Total Pages | 21 |
| Manufacturer | STMicroelectronics |
| Website | https://www.st.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | STW40N60M2-4, STW40N60M2, STP40N60M2, STB40N60M2 |
| Description | MOSFET N-CH 600V 34A TO-247, MOSFET N-CH 600V 34A TO-247, MOSFET N-CH 600V 34A TO220, MOSFET N-CH 600V 34A D2PAK |
STW40N60M2-4 - STMicroelectronics
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URL Link
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Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |