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Datasheet | SUD35N10-26P-T4GE3 |
File Size | 181.01 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | SUD35N10-26P-T4GE3, SUD35N10-26P-E3, SUD35N10-26P-GE3 |
Description | MOSFET N-CH 100V 35A TO252, MOSFET N-CH 100V 35A TO252, MOSFET N-CH 100V 35A DPAK |
SUD35N10-26P-T4GE3 - Vishay Siliconix
![SUD35N10-26P-T4GE3 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0001.jpg)
![SUD35N10-26P-T4GE3 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0002.jpg)
![SUD35N10-26P-T4GE3 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0003.jpg)
![SUD35N10-26P-T4GE3 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0004.jpg)
![SUD35N10-26P-T4GE3 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0005.jpg)
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![SUD35N10-26P-T4GE3 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0008.jpg)
![SUD35N10-26P-T4GE3 Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/sud35n10-26p-t4ge3-0009.jpg)
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URL Link
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V FET Feature - Power Dissipation (Max) 8.3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V FET Feature - Power Dissipation (Max) 8.3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V FET Feature - Power Dissipation (Max) 8.3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |