Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SUD50N03-12P-GE3 |
| File Size | 183.55 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SUD50N03-12P-GE3 |
| Description | MOSFET N-CH 30V 16.8A TO252 |
SUD50N03-12P-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SUD50N03-12P-GE3 | Vishay Siliconix | MOSFET N-CH 30V 16.8A TO252 | 295 More on Order |
URL Link
www.oemstron.com/datasheet/SUD50N03-12P-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 17mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |