Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SUD50P10-43-E3 |
| File Size | 84.77 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SUD50P10-43-E3 |
| Description | MOSFET P-CH 100V 38A TO252 |
SUD50P10-43-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SUD50P10-43-E3 | Vishay Siliconix | MOSFET P-CH 100V 38A TO252 | 477 More on Order |
URL Link
www.oemstron.com/datasheet/SUD50P10-43-E3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 43mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5230pF @ 50V FET Feature - Power Dissipation (Max) 8.3W (Ta), 136W (Tc) Operating Temperature -50°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |