Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SUM110N03-04P-E3 |
| File Size | 74.33 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SUM110N03-04P-E3 |
| Description | MOSFET N-CH 30V 110A D2PAK |
SUM110N03-04P-E3 - Vishay Siliconix
The Products You May Be Interested In
 |
SUM110N03-04P-E3 | Vishay Siliconix | MOSFET N-CH 30V 110A D2PAK | 492 More on Order |
URL Link
www.oemstron.com/datasheet/SUM110N03-04P-E3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 120W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |