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| Datasheet | SUP50N10-21P-GE3 |
| File Size | 122.75 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SUP50N10-21P-GE3 |
| Description | MOSFET N-CH 100V 50A TO220AB |
SUP50N10-21P-GE3 - Vishay Siliconix
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SUP50N10-21P-GE3 | Vishay Siliconix | MOSFET N-CH 100V 50A TO220AB | 406 More on Order |
URL Link
www.oemstron.com/datasheet/SUP50N10-21P-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 50V FET Feature - Power Dissipation (Max) 3.1W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |