Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SUP60N06-12P-GE3 |
| File Size | 97.69 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SUP60N06-12P-GE3, SUP60N06-12P-E3 |
| Description | MOSFET N-CH 60V 60A TO220AB, MOSFET N-CH 60V 60A TO220AB |
SUP60N06-12P-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SUP60N06-12P-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A TO220AB | 365 More on Order |
 |
SUP60N06-12P-E3 | Vishay Siliconix | MOSFET N-CH 60V 60A TO220AB | 183 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 30V FET Feature - Power Dissipation (Max) 3.25W (Ta), 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 30V FET Feature - Power Dissipation (Max) 3.25W (Ta), 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |