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TC58CVG0S3HQAIE Datasheet

TC58CVG0S3HQAIE Cover
DatasheetTC58CVG0S3HQAIE
File Size1,679.35 KB
Total Pages42
ManufacturerToshiba Memory America, Inc.
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts TC58CVG0S3HQAIE, TC58CVG0S3HRAIG
Description IC FLASH 1G SPI 104MHZ 16SOP, IC FLASH 1G SPI 104MHZ 8WSON

TC58CVG0S3HQAIE - Toshiba Memory America, Inc.

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TC58CVG0S3HQAIE TC58CVG0S3HQAIE Toshiba Memory America, Inc. IC FLASH 1G SPI 104MHZ 16SOP 426

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TC58CVG0S3HRAIG TC58CVG0S3HRAIG Toshiba Memory America, Inc. IC FLASH 1G SPI 104MHZ 8WSON 523

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URL Link

TC58CVG0S3HQAIE

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

1Gb (128M x 8)

Memory Interface

SPI - Quad I/O

Clock Frequency

104MHz

Write Cycle Time - Word, Page

-

Access Time

155µs

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.295", 7.50mm Width)

Supplier Device Package

16-SOP

TC58CVG0S3HRAIG

Toshiba Memory America, Inc.

Manufacturer

Toshiba Memory America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FLASH

Technology

FLASH - NAND (SLC)

Memory Size

1Gb (128M x 8)

Memory Interface

SPI - Quad I/O

Clock Frequency

104MHz

Write Cycle Time - Word, Page

-

Access Time

155µs

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

8-WDFN Exposed Pad

Supplier Device Package

8-WSON (6x8)