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| Datasheet | TH58BVG2S3HBAI4 |
| File Size | 1,243.01 KB |
| Total Pages | 51 |
| Manufacturer | Toshiba Memory America, Inc. |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TH58BVG2S3HBAI4 |
| Description | 4GB SLC BENAND 24NM BGA 9X11 (EE |
TH58BVG2S3HBAI4 - Toshiba Memory America, Inc.
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TH58BVG2S3HBAI4 | Toshiba Memory America, Inc. | 4GB SLC BENAND 24NM BGA 9X11 (EE | 414 More on Order |
URL Link
www.oemstron.com/datasheet/TH58BVG2S3HBAI4
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Manufacturer Toshiba Memory America, Inc. Series Benand™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gb (512M x 8) Memory Interface - Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 63-VFBGA Supplier Device Package 63-TFBGA (9x11) |