![TH58BVG2S3HTA00 Cover](http://media.oemstron.com/oemstron/datasheet/sm/th58bvg2s3hta00-0001.jpg)
Datasheet | TH58BVG2S3HTA00 |
File Size | 491.16 KB |
Total Pages | 2 |
Manufacturer | Toshiba Memory America, Inc. |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | TH58BVG2S3HTA00 |
Description | IC FLASH 4G PARALLEL 48TSOP I |
TH58BVG2S3HTA00 - Toshiba Memory America, Inc.
![TH58BVG2S3HTA00 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/th58bvg2s3hta00-0001.jpg)
![TH58BVG2S3HTA00 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/th58bvg2s3hta00-0002.jpg)
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TH58BVG2S3HTA00 | Toshiba Memory America, Inc. | IC FLASH 4G PARALLEL 48TSOP I | 489 More on Order |
URL Link
www.oemstron.com/datasheet/TH58BVG2S3HTA00
Manufacturer Toshiba Memory America, Inc. Series Benand™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gb (512M x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP I |