Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | TK10A60E,S5X |
| File Size | 235.19 KB |
| Total Pages | 9 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TK10A60E,S5X |
| Description | MOSFET N-CH 600V TO220SIS |
TK10A60E,S5X - Toshiba Semiconductor and Storage
The Products You May Be Interested In
 |
TK10A60E,S5X | Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | 299 More on Order |
URL Link
www.oemstron.com/datasheet/TK10A60E,S5X
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |