Datasheet | TP0606N3-G-P003 |
File Size | 606.76 KB |
Total Pages | 5 |
Manufacturer | Microchip Technology |
Website | http://www.microchip.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | TP0606N3-G-P003, TP0606N3-G-P002, TP0606N3-G |
Description | MOSFET P-CH 60V 320MA TO92-3, MOSFET P-CH 60V 320MA TO92-3, MOSFET P-CH 60V 320MA TO92-3 |
TP0606N3-G-P003 - Microchip Technology
The Products You May Be Interested In
TP0606N3-G-P003 | Microchip Technology | MOSFET P-CH 60V 320MA TO92-3 | 265 More on Order |
|
TP0606N3-G-P002 | Microchip Technology | MOSFET P-CH 60V 320MA TO92-3 | 156 More on Order |
|
TP0606N3-G | Microchip Technology | MOSFET P-CH 60V 320MA TO92-3 | 3482 More on Order |
URL Link
Microchip Technology Manufacturer Microchip Technology Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Microchip Technology Manufacturer Microchip Technology Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Microchip Technology Manufacturer Microchip Technology Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 750mA, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |