Datasheet | TP0610K-T1 |
File Size | 212.19 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | TP0610K-T1, TP0610K-T1-E3, TP0610K-T1-GE3 |
Description | MOSFET P-CH 60V 185MA SOT23, MOSFET P-CH 60V 185MA SOT23-3, MOSFET P-CH 60V 185MA TO-236 |
TP0610K-T1 - Vishay Siliconix
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TP0610K-T1-GE3 | Vishay Siliconix | MOSFET P-CH 60V 185MA TO-236 | 111041 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 185mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |