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| Datasheet | TP65H035WSQA |
| File Size | 953.59 KB |
| Total Pages | 12 |
| Manufacturer | Transphorm |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TP65H035WSQA |
| Description | GANFET N-CH 650V 47A TO247-3 |
TP65H035WSQA - Transphorm
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TP65H035WSQA | Transphorm | GANFET N-CH 650V 47A TO247-3 | 446 More on Order |
URL Link
www.oemstron.com/datasheet/TP65H035WSQA
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Manufacturer Transphorm Series Automotive, AEC-Q101 FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 47.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V FET Feature - Power Dissipation (Max) 187W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |