Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | TPC6109-H(TE85L,FM |
| File Size | 261.75 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TPC6109-H(TE85L,FM |
| Description | MOSFET P-CH 30V 5A VS-6 |
TPC6109-H(TE85L,FM - Toshiba Semiconductor and Storage
The Products You May Be Interested In
 |
TPC6109-H(TE85L,FM | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | 478 More on Order |
URL Link
www.oemstron.com/datasheet/TPC6109-H(TE85L,FM
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII-H FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 59mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VS-6 (2.9x2.8) Package / Case SOT-23-6 Thin, TSOT-23-6 |