
Datasheet | TPC8207(TE12L,Q) |
File Size | 187.79 KB |
Total Pages | 7 |
Manufacturer | Toshiba Semiconductor and Storage |
Website | http://www.toshiba.com/taec/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | TPC8207(TE12L,Q), TPC8207(TE12L) |
Description | MOSFET 2N-CH 20V 6A 8-SOP, MOSFET 2N-CH 20V 6A 8-SOP |
TPC8207(TE12L,Q) - Toshiba Semiconductor and Storage







The Products You May Be Interested In
![]() |
TPC8207(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 6A 8-SOP | 205 More on Order |
![]() |
TPC8207(TE12L) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 6A 8-SOP | 250 More on Order |
URL Link
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 20mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 20mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |