Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | TPC8208(TE12L,Q,M) |
| File Size | 224.48 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | TPC8208(TE12L,Q,M), TPC8208(TE12L,Q) |
| Description | MOSFET 2N-CH 20V 5A SOP8, MOSFET 2N-CH 20V 5A 8-SOP |
TPC8208(TE12L,Q,M) - Toshiba Semiconductor and Storage
The Products You May Be Interested In
 |
TPC8208(TE12L,Q,M) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 5A SOP8 | 385 More on Order |
|
TPC8208(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 5A 8-SOP | 105 More on Order |
URL Link
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 4V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 780pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 4V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 780pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |