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TPCA8102(TE12L Datasheet

TPCA8102(TE12L,Q,M Cover
DatasheetTPCA8102(TE12L,Q,M
File Size256.1 KB
Total Pages7
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts TPCA8102(TE12L,Q,M
Description MOSFET P-CH 30V 40A SOP-8 ADV

TPCA8102(TE12L,Q,M - Toshiba Semiconductor and Storage

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TPCA8102(TE12L,Q,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN