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| Datasheet | TPCF8102(TE85L,F,M |
| File Size | 251.8 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TPCF8102(TE85L,F,M |
| Description | MOSFET P-CH 20V 6A VS8 2-3U1A |
TPCF8102(TE85L,F,M - Toshiba Semiconductor and Storage
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URL Link
www.oemstron.com/datasheet/TPCF8102(TE85L,F,M
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VS-8 (2.9x1.5) Package / Case 8-SMD, Flat Lead |