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| Datasheet | TSM10N60CZ C0G |
| File Size | 2,438.22 KB |
| Total Pages | 9 |
| Manufacturer | Taiwan Semiconductor Corporation |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | TSM10N60CZ C0G, TSM10N60CI C0G |
| Description | MOSFET N-CHANNEL, MOSFET N-CHANNEL |
TSM10N60CZ C0G - Taiwan Semiconductor Corporation
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Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1738pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1738pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220 Package / Case TO-220-3 Full Pack, Isolated Tab |