Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | UGE5JT-E3/45 |
| File Size | 82.91 KB |
| Total Pages | 4 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | UGE5JT-E3/45, UGE5HT-E3/45 |
| Description | DIODE GEN PURP 600V 5A TO220AC, DIODE GEN PURP 500V 5A TO220AC |
UGE5JT-E3/45 - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
UGE5JT-E3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A TO220AC | 302 More on Order |
 |
UGE5HT-E3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 500V 5A TO220AC | 259 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 1.75V @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 30µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 500V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 1.75V @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 30µA @ 500V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |