Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | UPA1912TE(0)-T1-AT |
| File Size | 189.7 KB |
| Total Pages | 10 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | UPA1912TE(0)-T1-AT |
| Description | MOSFET P-CH SC-95 |
UPA1912TE(0)-T1-AT - Renesas Electronics America
The Products You May Be Interested In
 |
UPA1912TE(0)-T1-AT | Renesas Electronics America | MOSFET P-CH SC-95 | 384 More on Order |
URL Link
www.oemstron.com/datasheet/UPA1912TE(0)-T1-AT
|
Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 810pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package SC-95 Package / Case SC-95 |