Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | UPA2812T1L-E2-AT |
| File Size | 167.23 KB |
| Total Pages | 7 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | UPA2812T1L-E2-AT |
| Description | MOSFET P-CH 30V 30A 8HVSON |
UPA2812T1L-E2-AT - Renesas Electronics America
The Products You May Be Interested In
 |
UPA2812T1L-E2-AT | Renesas Electronics America | MOSFET P-CH 30V 30A 8HVSON | 208 More on Order |
URL Link
www.oemstron.com/datasheet/UPA2812T1L-E2-AT
|
Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3740pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HWSON (3.3x3.3) Package / Case 8-PowerVDFN |