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VB30100SG-E3/8W Datasheet

VB30100SG-E3/8W Cover
DatasheetVB30100SG-E3/8W
File Size216.74 KB
Total Pages6
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 5 part numbers
Associated Parts VB30100SG-E3/8W, VB30100SG-E3/4W, VI30100SG-E3/4W, V30100SG-E3/4W, VF30100SG-E3/4W
Description DIODE SCHOTTKY 100V 30A TO263AB, DIODE SCHOTTKY 100V 30A TO263AB, DIODE SCHOTTKY 100V 30A TO262AA, DIODE SCHOTTKY 100V 30A TO220AB, DIODE SCHOTTKY 100V 30A ITO220AB

VB30100SG-E3/8W - Vishay Semiconductor Diodes Division

VB30100SG-E3/8W Datasheet Page 1
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VB30100SG-E3/8W Datasheet Page 5
VB30100SG-E3/8W Datasheet Page 6

The Products You May Be Interested In

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VI30100SG-E3/4W VI30100SG-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 30A TO262AA 457

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V30100SG-E3/4W V30100SG-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 30A TO220AB 431

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VF30100SG-E3/4W VF30100SG-E3/4W Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 30A ITO220AB 679

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URL Link

VB30100SG-E3/8W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

350µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-40°C ~ 150°C

VB30100SG-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

350µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Operating Temperature - Junction

-40°C ~ 150°C

VI30100SG-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

350µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262AA

Operating Temperature - Junction

-40°C ~ 150°C

V30100SG-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

350µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Operating Temperature - Junction

-40°C ~ 150°C

VF30100SG-E3/4W

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

TMBS®

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

350µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack, Isolated Tab

Supplier Device Package

ITO-220AB

Operating Temperature - Junction

-40°C ~ 150°C