![VN10LPSTOB Cover](http://media.oemstron.com/oemstron/datasheet/sm/vn10lpstob-0001.jpg)
Datasheet | VN10LPSTOB |
File Size | 595.54 KB |
Total Pages | 5 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | VN10LPSTOB, VN10LPSTOA, VN10LP |
Description | MOSFET N-CH 60V 0.27A TO92-3, MOSFET N-CH 60V 0.27A TO92-3, MOSFET N-CH 60V 270MA TO92-3 |
VN10LPSTOB - Diodes Incorporated
![VN10LPSTOB Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/vn10lpstob-0001.jpg)
![VN10LPSTOB Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/vn10lpstob-0002.jpg)
![VN10LPSTOB Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/vn10lpstob-0003.jpg)
![VN10LPSTOB Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/vn10lpstob-0004.jpg)
![VN10LPSTOB Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/vn10lpstob-0005.jpg)
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VN10LPSTOA | Diodes Incorporated | MOSFET N-CH 60V 0.27A TO92-3 | 379 More on Order |
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VN10LP | Diodes Incorporated | MOSFET N-CH 60V 270MA TO92-3 | 10599 More on Order |
URL Link
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3, Formed Leads |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3, Formed Leads |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |