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VQ2001P-2 Datasheet

VQ2001P-2 Cover
DatasheetVQ2001P-2
File Size50.53 KB
Total Pages5
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VQ2001P-2, VQ2001P
Description MOSFET 4P-CH 30V 0.6A 14DIP, MOSFET 4P-CH 30V 0.6A 14DIP

VQ2001P-2 - Vishay Siliconix

VQ2001P-2 Datasheet Page 1
VQ2001P-2 Datasheet Page 2
VQ2001P-2 Datasheet Page 3
VQ2001P-2 Datasheet Page 4
VQ2001P-2 Datasheet Page 5

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URL Link

VQ2001P-2

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

4 P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

600mA

Rds On (Max) @ Id, Vgs

2Ohm @ 1A, 12V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

14-DIP

Supplier Device Package

14-DIP

VQ2001P

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

4 P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

600mA

Rds On (Max) @ Id, Vgs

2Ohm @ 1A, 12V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

-

Package / Case

-

Supplier Device Package

-