Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-10ETF04FP-M3 |
| File Size | 233.03 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | VS-10ETF04FP-M3, VS-10ETF06FP-M3, VS-10ETF02FP-M3 |
| Description | DIODE GEN PURP 400V 10A TO220FP, DIODE GEN PURP 600V 10A TO220FP, DIODE GEN PURP 200V 10A TO220FP |
VS-10ETF04FP-M3 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.2V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 100µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220-2 Full Pack Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.2V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 100µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220-2 Full Pack Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.2V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 100µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220-2 Full Pack Operating Temperature - Junction -40°C ~ 150°C |