Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-10ETF12FP-M3 |
| File Size | 226.46 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VS-10ETF12FP-M3, VS-10ETF10FP-M3 |
| Description | DIODE GEN PURP 1.2KV 10A TO220FP, DIODE GEN PURP 1KV 10A TO220FP |
VS-10ETF12FP-M3 - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
VS-10ETF12FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 10A TO220FP | 174 More on Order |
 |
VS-10ETF10FP-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 10A TO220FP | 234 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.33V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 310ns Current - Reverse Leakage @ Vr 100µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220-2 Full Pack Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.33V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 310ns Current - Reverse Leakage @ Vr 100µA @ 1000V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220-2 Full Pack Operating Temperature - Junction -40°C ~ 150°C |