Semiconductors
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| Datasheet | VS-10ETS08-M3 |
| File Size | 164.04 KB |
| Total Pages | 6 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VS-10ETS08-M3, VS-10ETS12-M3 |
| Description | DIODE GEN PURP 800V 10A TO220AC, DIODE GEN PURP 1.2KV 10A TO220AC |
VS-10ETS08-M3 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.1V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 800V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.1V @ 10A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 150°C |