Datasheet | VS-20ETS16PBF |
File Size | 157.13 KB |
Total Pages | 6 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | VS-20ETS16PBF, VS-20ETS16-M3 |
Description | DIODE GEN PURP 1.6KV 20A TO220AB, DIODE GEN PURP 1.6KV 20A TO220AB |
VS-20ETS16PBF - Vishay Semiconductor Diodes Division
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VS-20ETS16-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.6KV 20A TO220AB | 475 More on Order |
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Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.1V @ 20A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 1600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction -40°C ~ 150°C |
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.1V @ 20A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 1600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction -40°C ~ 150°C |