Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-60EPS16PBF |
| File Size | 207.77 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VS-60EPS16PBF, VS-60EPS16-M3 |
| Description | DIODE GEN PURP 1.6KV 60A TO247AC, DIODE GEN PURP 1.6KV 60A TO247AC |
VS-60EPS16PBF - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
VS-60EPS16PBF | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.6KV 60A TO247AC | 287 More on Order |
 |
VS-60EPS16-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.6KV 60A TO247AC | 1411 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1V @ 30A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 1600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AC Modified Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.15V @ 60A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 1600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AC Modified Operating Temperature - Junction -40°C ~ 150°C |