Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-APU6006L-M3 |
| File Size | 171.55 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | VS-APU6006L-M3, VS-EPU6006L-M3 |
| Description | DIODE GEN PURP 600V 60A TO247-3, DIODE GEN PURP 600V 30A TO247-2 |
VS-APU6006L-M3 - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
VS-APU6006L-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 60A TO247-3 | 259 More on Order |
 |
VS-EPU6006L-M3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 30A TO247-2 | 237 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.5V @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 110ns Current - Reverse Leakage @ Vr 30µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 2V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 45ns Current - Reverse Leakage @ Vr 30µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AD Operating Temperature - Junction -65°C ~ 175°C |