![VS-CPV362M4FPBF Cover](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0001.jpg)
Datasheet | VS-CPV362M4FPBF |
File Size | 230.8 KB |
Total Pages | 9 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | VS-CPV362M4FPBF, CPV362M4U, CPV362M4K, CPV362M4F |
Description | IGBT 600V 8.8A 23W IMS-2, IGBT SIP MODULE 600V 3.9A IMS-2, IGBT SIP MODULE 600V 31 IMS-2, IGBT SIP MODULE 600V 8.8A IMS-2 |
VS-CPV362M4FPBF - Vishay Semiconductor Diodes Division
![VS-CPV362M4FPBF Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0001.jpg)
![VS-CPV362M4FPBF Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0002.jpg)
![VS-CPV362M4FPBF Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0003.jpg)
![VS-CPV362M4FPBF Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0004.jpg)
![VS-CPV362M4FPBF Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0005.jpg)
![VS-CPV362M4FPBF Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0006.jpg)
![VS-CPV362M4FPBF Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0007.jpg)
![VS-CPV362M4FPBF Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0008.jpg)
![VS-CPV362M4FPBF Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/vs-cpv362m4fpbf-0009.jpg)
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 8.8A Power - Max 23W Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 4.8A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 0.34nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 19-SIP (13 Leads), IMS-2 Supplier Device Package IMS-2 |
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 7.2A Power - Max 23W Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 7.2A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 0.53nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 19-SIP (13 Leads), IMS-2 Supplier Device Package IMS-2 |
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 5.7A Power - Max 23W Vce(on) (Max) @ Vge, Ic 1.93V @ 15V, 3A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 0.45nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 19-SIP (13 Leads), IMS-2 Supplier Device Package IMS-2 |
Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 8.8A Power - Max 23W Vce(on) (Max) @ Vge, Ic 1.66V @ 15V, 8.8A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 0.34nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 19-SIP (13 Leads), IMS-2 Supplier Device Package IMS-2 |