Datasheet | VS-ETH3007THN3 |
File Size | 147.69 KB |
Total Pages | 7 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-ETH3007THN3 |
Description | DIODE GEN PURP 650V 30A TO220AC |
VS-ETH3007THN3 - Vishay Semiconductor Diodes Division
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VS-ETH3007THN3 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 650V 30A TO220AC | 1794 More on Order |
URL Link
www.oemstron.com/datasheet/VS-ETH3007THN3
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, FRED Pt® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 2.1V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 37ns Current - Reverse Leakage @ Vr 30µA @ 650V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 175°C |