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VS-ETH3007THN3 Datasheet

VS-ETH3007THN3 Cover
DatasheetVS-ETH3007THN3
File Size147.69 KB
Total Pages7
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-ETH3007THN3
Description DIODE GEN PURP 650V 30A TO220AC

VS-ETH3007THN3 - Vishay Semiconductor Diodes Division

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VS-ETH3007THN3 VS-ETH3007THN3 Vishay Semiconductor Diodes Division DIODE GEN PURP 650V 30A TO220AC 1794

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URL Link

VS-ETH3007THN3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

2.1V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

37ns

Current - Reverse Leakage @ Vr

30µA @ 650V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 175°C