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VS-ETX0806-M3 Datasheet

VS-ETX0806-M3 Cover
DatasheetVS-ETX0806-M3
File Size204.26 KB
Total Pages9
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts VS-ETX0806-M3, VS-ETX0806FP-M3
Description DIODE GEN PURP 600V 8A TO220-2, DIODE GEN PURP 600V 8A TO220-2

VS-ETX0806-M3 - Vishay Semiconductor Diodes Division

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The Products You May Be Interested In

VS-ETX0806-M3 VS-ETX0806-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220-2 1853

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VS-ETX0806FP-M3 VS-ETX0806FP-M3 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220-2 1590

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URL Link

VS-ETX0806-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

3.4V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

17ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2

Operating Temperature - Junction

-65°C ~ 175°C

VS-ETX0806FP-M3

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

FRED Pt®

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

3.4V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

17ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack

Supplier Device Package

TO-220-2 Full Pack

Operating Temperature - Junction

-65°C ~ 175°C