Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | VS-FB190SA10 |
| File Size | 312.56 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-FB190SA10 |
| Description | MOSFET N-CH 100V 190A SOT227 |
VS-FB190SA10 - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
VS-FB190SA10 | Vishay Semiconductor Diodes Division | MOSFET N-CH 100V 190A SOT227 | 492 More on Order |
URL Link
www.oemstron.com/datasheet/VS-FB190SA10
|
Manufacturer Vishay Semiconductor Diodes Division Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 190A Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 180A, 10V Vgs(th) (Max) @ Id 4.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V FET Feature - Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227 Package / Case SOT-227-4, miniBLOC |