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VS-FC80NA20 Datasheet

VS-FC80NA20 Cover
DatasheetVS-FC80NA20
File Size380.27 KB
Total Pages10
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-FC80NA20
Description MOSFET N-CH 200V 108A

VS-FC80NA20 - Vishay Semiconductor Diodes Division

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URL Link

VS-FC80NA20

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

108A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

161nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10720pF @ 50V

FET Feature

-

Power Dissipation (Max)

405W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC