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VS-GB100TS60NPBF Datasheet

VS-GB100TS60NPBF Cover
DatasheetVS-GB100TS60NPBF
File Size187.08 KB
Total Pages8
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB100TS60NPBF
Description IGBT 600V 108A 390W INT-A-PAK

VS-GB100TS60NPBF - Vishay Semiconductor Diodes Division

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VS-GB100TS60NPBF VS-GB100TS60NPBF Vishay Semiconductor Diodes Division IGBT 600V 108A 390W INT-A-PAK 481

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URL Link

VS-GB100TS60NPBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

NPT

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

108A

Power - Max

390W

Vce(on) (Max) @ Vge, Ic

2.85V @ 15V, 100A

Current - Collector Cutoff (Max)

100µA

Input Capacitance (Cies) @ Vce

-

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-Pak

Supplier Device Package

INT-A-PAK