Datasheet | VS-GB50YF120N |
File Size | 211.83 KB |
Total Pages | 10 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-GB50YF120N |
Description | IGBT 1200V 66A 330W ECONO |
VS-GB50YF120N - Vishay Semiconductor Diodes Division
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VS-GB50YF120N | Vishay Semiconductor Diodes Division | IGBT 1200V 66A 330W ECONO | 150 More on Order |
URL Link
www.oemstron.com/datasheet/VS-GB50YF120N
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 66A Power - Max 330W Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 75A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package ECONO2 4PACK |