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VS-GB50YF120N Datasheet

VS-GB50YF120N Cover
DatasheetVS-GB50YF120N
File Size211.83 KB
Total Pages10
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts VS-GB50YF120N
Description IGBT 1200V 66A 330W ECONO

VS-GB50YF120N - Vishay Semiconductor Diodes Division

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VS-GB50YF120N VS-GB50YF120N Vishay Semiconductor Diodes Division IGBT 1200V 66A 330W ECONO 150

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URL Link

VS-GB50YF120N

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

IGBT Type

-

Configuration

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

66A

Power - Max

330W

Vce(on) (Max) @ Vge, Ic

4.5V @ 15V, 75A

Current - Collector Cutoff (Max)

250µA

Input Capacitance (Cies) @ Vce

-

Input

Standard

NTC Thermistor

No

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

ECONO2 4PACK