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| Datasheet | VS-GB75LP120N |
| File Size | 119.26 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-GB75LP120N |
| Description | IGBT 1200V 170A 658W INT-A-PAK |
VS-GB75LP120N - Vishay Semiconductor Diodes Division
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URL Link
www.oemstron.com/datasheet/VS-GB75LP120N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type - Configuration Single Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 170A Power - Max 658W Vce(on) (Max) @ Vge, Ic 1.82V @ 15V, 75A (Typ) Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 5.52nF @ 25V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |