Datasheet | VS-GB90SA120U |
File Size | 282.71 KB |
Total Pages | 8 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-GB90SA120U |
Description | TRANSISTOR INSLTED GATE BIPOLAR |
VS-GB90SA120U - Vishay Semiconductor Diodes Division
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VS-GB90SA120U | Vishay Semiconductor Diodes Division | TRANSISTOR INSLTED GATE BIPOLAR | 193 More on Order |
URL Link
www.oemstron.com/datasheet/VS-GB90SA120U
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type NPT Configuration Single Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 149A Power - Max 862W Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SOT-227-4 Supplier Device Package SOT-227 |