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| Datasheet | VS-GT100TP120N |
| File Size | 183.81 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-GT100TP120N |
| Description | IGBT 1200V 180A 652W INT-A-PAK |
VS-GT100TP120N - Vishay Semiconductor Diodes Division
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URL Link
www.oemstron.com/datasheet/VS-GT100TP120N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 180A Power - Max 652W Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 12.8nF @ 30V Input Standard NTC Thermistor No Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Package / Case INT-A-PAK (3 + 4) Supplier Device Package INT-A-PAK |