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| Datasheet | VS-GT300YH120N |
| File Size | 187.58 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VS-GT300YH120N |
| Description | IGBT 1200V 341A 1042W DIAP |
VS-GT300YH120N - Vishay Semiconductor Diodes Division
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URL Link
www.oemstron.com/datasheet/VS-GT300YH120N
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Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 341A Power - Max 1042W Vce(on) (Max) @ Vge, Ic 2.17V @ 15V, 300A (Typ) Current - Collector Cutoff (Max) 300µA Input Capacitance (Cies) @ Vce 36nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 8) Supplier Device Package Double INT-A-PAK |