Datasheet | VS-GT400TH120U |
File Size | 291.91 KB |
Total Pages | 7 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | VS-GT400TH120U |
Description | IGBT 1200V 750A 2344W DIAP |
VS-GT400TH120U - Vishay Semiconductor Diodes Division
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VS-GT400TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 750A 2344W DIAP | 385 More on Order |
URL Link
www.oemstron.com/datasheet/VS-GT400TH120U
Vishay Semiconductor Diodes Division Manufacturer Vishay Semiconductor Diodes Division Series - IGBT Type Trench Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 750A Power - Max 2344W Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 400A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 51.2nF @ 30V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Double INT-A-PAK (3 + 8) Supplier Device Package Double INT-A-PAK |