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| Datasheet | VWM200-01P |
| File Size | 201.56 KB |
| Total Pages | 2 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | VWM200-01P |
| Description | MOSFET 6N-CH 100V 210A V2 |
VWM200-01P - IXYS
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VWM200-01P | IXYS | MOSFET 6N-CH 100V 210A V2 | 148 More on Order |
URL Link
www.oemstron.com/datasheet/VWM200-01P
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Manufacturer IXYS Series - FET Type 6 N-Channel (3-Phase Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 210A Rds On (Max) @ Id, Vgs 5.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case V2-PAK Supplier Device Package V2-PAK |