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| Datasheet | ZDS020N60TB |
| File Size | 675.19 KB |
| Total Pages | 12 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | ZDS020N60TB |
| Description | MOSFET N-CH 600V 8SOIC |
ZDS020N60TB - Rohm Semiconductor
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URL Link
www.oemstron.com/datasheet/ZDS020N60TB
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 630mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |