Datasheet | ZVN2106ASTOB |
File Size | 49.53 KB |
Total Pages | 3 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | ZVN2106ASTOB, ZVN2106ASTOA, ZVN2106ASTZ, ZVN2106A |
Description | MOSFET N-CH 60V 0.45A TO92-3, MOSFET N-CH 60V 0.45A TO92-3, MOSFET N-CH 60V 0.45A TO92-3, MOSFET N-CH 60V 450MA TO92-3 |
ZVN2106ASTOB - Diodes Incorporated
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ZVN2106ASTOB | Diodes Incorporated | MOSFET N-CH 60V 0.45A TO92-3 | 427 More on Order |
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ZVN2106ASTOA | Diodes Incorporated | MOSFET N-CH 60V 0.45A TO92-3 | 202 More on Order |
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ZVN2106ASTZ | Diodes Incorporated | MOSFET N-CH 60V 0.45A TO92-3 | 471 More on Order |
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ZVN2106A | Diodes Incorporated | MOSFET N-CH 60V 450MA TO92-3 | 7346 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 18V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 18V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 18V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 18V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |